Correlation of trap creation with electron heating in silicon dioxideDIMARIA, D. J.Applied physics letters. 1987, Vol 51, Num 9, pp 655-657, issn 0003-6951Article

Temperature dependence of trap creation in silicon dioxideDIMARIA, D. J.Journal of applied physics. 1990, Vol 68, Num 10, pp 5234-5246, issn 0021-8979, 13 p.Article

Hole trapping, substrate currents, and breakdown in thin silicon dioxide filmsDIMARIA, D. J.IEEE electron device letters. 1995, Vol 16, Num 5, pp 184-186, issn 0741-3106Article

A permeable-base switching device using stacked layers of silicon, silicon dioxide, and silicon-rich silicon dioxideDIMARIA, D. J; ARIENZO, M.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 8, pp 1762-1767, issn 0018-9383, 1Article

Theory of the current-field relation in silicon-rich silicon dioxideAMIRAM RON; DIMARIA, D. J.Physical review. B, Condensed matter. 1984, Vol 30, Num 2, pp 807-812, issn 0163-1829Article

Identification of an interface defect generated by hot electrons in SiO₂STATHIS, J. H; DIMARIA, D. J.Applied physics letters. 1992, Vol 61, Num 24, pp 2887-2889, issn 0003-6951Article

Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on siliconDIMARIA, D. J; CARTIER, E; ARNOLD, D et al.Journal of applied physics. 1993, Vol 73, Num 7, pp 3367-3384, issn 0021-8979Article

Acoustic-phonon runaway and impact ionization by hot electrons in silicon dioxideARNOLD, D; CARTIER, E; DIMARIA, D. J et al.Physical review. B, Condensed matter. 1992, Vol 45, Num 3, pp 1477-1480, issn 0163-1829Article

Electron heating in silicon nitride and silicon oxynitride filmsDIMARIA, D. J; ABERNATHEY, J. R.Journal of applied physics. 1986, Vol 60, Num 5, pp 1727-1729, issn 0021-8979Article

Energy band-gap discontinuities in GaAs:(Al,Ga)As heterojunctionsBATEY, J; WRIGHT, S. L; DIMARIA, D. J et al.Journal of applied physics. 1985, Vol 57, Num 2, pp 484-487, issn 0021-8979Article

Quantum Monte Carlo simulation of high-field electron transport: an application to silicon dioxideFISCHETTI, M. V; DIMARIA, D. J.Physical review letters. 1985, Vol 55, Num 22, pp 2475-2478, issn 0031-9007Article

Degradation and breakdown of silicon dioxide films on siliconDIMARIA, D. J; ARNOLD, D; CARTIER, E et al.Applied physics letters. 1992, Vol 61, Num 19, pp 2329-2331, issn 0003-6951Article

Trapping and trap creation studies on nitrided and reoxidized-nitrided silicon dioxide films on siliconDIMARIA, D. J; STATHIS, J. H.Journal of applied physics. 1991, Vol 70, Num 3, pp 1500-1509, issn 0021-8979Article

Impact ionization and positive charge formation in silicon dioxide films on siliconDIMARIA, D. J; ARNOLD, D; CARTIER, E et al.Applied physics letters. 1992, Vol 60, Num 17, pp 2118-2120, issn 0003-6951Article

Interface and bulk trap generation in metal-oxide-semiconductor capacitorsBUCHANAN, D. A; DIMARIA, D. J.Journal of applied physics. 1990, Vol 67, Num 12, pp 7439-7452, issn 0021-8979Article

Vacuum emission of hot electrons from silicon dioxide at low temperaturesDIMARIA, D. J; FISCHETTI, M. V.Journal of applied physics. 1988, Vol 64, Num 9, pp 4683-4691, issn 0021-8979Article

Silicon-rich SiO₂ and thermal SiO₂ dual dielectric for yield improvement and high capacitanceLAI, S. K.-C; DIMARIA, D. J; FANG, F. F et al.I.E.E.E. transactions on electron devices. 1983, Vol 30, Num 8, pp 894-897, issn 0018-9383Article

Coulombic and neutral trapping centers in silicon dioxideBUCHANAN, D. A; FISCHETTI, M. V; DIMARIA, D. J et al.Physical review. B, Condensed matter. 1991, Vol 43, Num 2, pp 1471-1486, issn 0163-1829, 16 p.Article

Optimized silicon-rich oxide (SRO) deposition process for 5-V-only flash EEPROM applicationsDORI, L; ACOVIC, A; DIMARIA, D. J et al.IEEE electron device letters. 1993, Vol 14, Num 6, pp 283-285, issn 0741-3106Article

Electron heating studies in silicon dioxide: low fields and thick filmsDIMARIA, D. J; FISCHETTI, M. V; ARIENZO, M et al.Journal of applied physics. 1986, Vol 60, Num 5, pp 1719-1726, issn 0021-8979Article

A study of the electrical and luminescence characteristics of a novel Si-based thin film electroluminescent deviceROBBINS, D. J; DIMARIA, D. J; FALCONY, C et al.Journal of applied physics. 1983, Vol 54, Num 8, pp 4553-4569, issn 0021-8979Article

Direct observation of ballistic electrons in silicon dioxideDIMARIA, D. J; FISCHETTI, M. V; BATEY, J et al.Physical review letters. 1986, Vol 57, Num 25, pp 3213-3216, issn 0031-9007Article

Atomic hydrogen-induced degradation of thin SiO₂ gate oxidesCARTIER, E; BUCHANAN, D. A; STATHIS, J. H et al.Journal of non-crystalline solids. 1995, Vol 187, pp 244-247, issn 0022-3093Conference Paper

Interface traps induced by hole trapping in metal-oxide semiconductor devicesROH, Y; TROMBETTA, L; DIMARIA, D. J et al.Journal of non-crystalline solids. 1995, Vol 187, pp 165-169, issn 0022-3093Conference Paper

An electron paramagnetic resonance study of electron injected oxides in metal-oxide-semiconductor capacitorsTROMBETTA, L. P; GERARDI, G. J; DIMARIA, D. J et al.Journal of applied physics. 1988, Vol 64, Num 5, pp 2434-2438, issn 0021-8979Article